| Abstract |
In this project, The 10nm (Ba,Sr)TiO3(BST) thin films were deposited on Pt/Ti/SiO2/Si substrates by RF magnetic sputtering system,and using Two-Step O2-Plasma and Post-O2 plasma treatment were applied to BST composite films. In which, after two-step O2-plasma treatment has batter leakage current than the other. According to the I-V and C-V measurements, BST thin films after 650oC O2-plasma annealed. That leakage current at กำ1.5V should to control very low, were measurement to be 3.12x10-9(A/cm2) and 4.37x10-8(A/cm2), Respectively. The dielectric constant could to get up to 228.04. Equivalent Oxide thickness and loss tangent calculated to be 0.171 and 0.00439, respectively. And then after O2-plasma treatment, the leakage current at กำ1.5V should to control very low, were measurement to be 4.74x10-9 (A/cm2) and 1.56x10-8 (A/cm2), Respectively. The dielectric constant could to get up to 217.33. Equivalent Oxide thickness and loss tangent calculated to be 0.179 and 0.0046 |